2SA1122E PNP Transistor

The 2SA1122E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SA1122E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SA1122E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SA1122E transistor as follows.

2SA1122E Transistor Specification

Transistor Code		2SA1122E
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO236
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	55V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		300

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