2SA1109 PNP Transistor

The 2SA1109 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SA1109 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SA1109 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SA1109 transistor as follows.

2SA1109 Transistor Specification

Transistor Code		2SA1109
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	200W
Collector-Base Voltage (Maximum)	VCB	180V
Collector-Emitter Voltage (Maximum)	VCE	180V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	135°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		90
Transition Frequency	FT	60MHz
Collector Capacitance	CC	450pF

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