2SA1016G PNP Transistor

The 2SA1016G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SA1016G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SA1016G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SA1016G transistor as follows.

2SA1016G Transistor Specification

Transistor Code		2SA1016G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.4W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		280
Transition Frequency	FT	110MHz
Collector Capacitance	CC	2.2pF

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