2N859 PNP Transistor

The 2N859 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N859 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N859 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N859 transistor as follows.

2N859 Transistor Specification

Transistor Code		2N859
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO18
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	140°C
Emitter-Base Voltage (Maximum)	VEB	25V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	6MHz
Collector Capacitance	CC	10pF

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