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2N835 NPN Transistor

The 2N835 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N835 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N835 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N835 transistor as follows.

Circuit diagram symbol of the 2N835 transistor

2N835 Transistor Specification

Transistor Code 2N835
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO18
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 25V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 300MHz
Collector Capacitance CC 4pF

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