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2N6678T3 NPN Transistor

The 2N6678T3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N6678T3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N6678T3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N6678T3 transistor as follows.

Circuit diagram symbol of the 2N6678T3 transistor

2N6678T3 Transistor Specification

Transistor Code 2N6678T3
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO257AA
Collector Power Dissipation (Maximum) PC 125W
Collector-Base Voltage (Maximum) VCB 650V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 8V
Forward Current Transfer Ratio (hFE Value) 8
Transition Frequency FT 15MHz

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More Transistors Datasheets in TO257AA Package

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