2N6676 NPN Transistor

The 2N6676 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N6676 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N6676 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N6676 transistor as follows.

2N6676 Transistor Specification

Transistor Code		2N6676
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	175W
Collector-Base Voltage (Maximum)	VCB	450V
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		8
Transition Frequency	FT	15MHz
Collector Capacitance	CC	500pF

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