2N657S NPN Transistor

The 2N657S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N657S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N657S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N657S transistor as follows.

2N657S Transistor Specification

Transistor Code		2N657S
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO5
Collector Power Dissipation (Maximum)	PC	2.8W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	10V
Collector Current (Maximum)	IC	0.8A
Operating Junction Temperature (Maximum)	TJ	75°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	40MHz
Collector Capacitance	CC	20pF

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