2N649 NPN Transistor

The 2N649 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N649 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N649 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N649 transistor as follows.

2N649 Transistor Specification

Transistor Code		2N649
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Germanium(GE)
Package		TO1
Collector Power Dissipation (Maximum)	PC	0.1W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	18V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	120°C
Emitter-Base Voltage (Maximum)	VEB	2V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	12MHz

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