2N649-5 NPN Transistor

The 2N649-5 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N649-5 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N649-5 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N649-5 transistor as follows.

2N649-5 Transistor Specification

Transistor Code		2N649-5
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Germanium(GE)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.1W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	18V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	120°C
Emitter-Base Voltage (Maximum)	VEB	2V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	12MHz

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