2N645 PNP Transistor

The 2N645 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N645 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N645 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N645 transistor as follows.

2N645 Transistor Specification

Transistor Code		2N645
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO9
Collector Power Dissipation (Maximum)	PC	0.12W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	120°C
Emitter-Base Voltage (Maximum)	VEB	2V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	40MHz
Collector Capacitance	CC	4pF

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