2N635 NPN Transistor

The 2N635 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N635 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N635 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N635 transistor as follows.

2N635 Transistor Specification

Transistor Code		2N635
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Germanium(GE)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	0.3A
Operating Junction Temperature (Maximum)	TJ	100°C
Emitter-Base Voltage (Maximum)	VEB	15V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	10MHz
Collector Capacitance	CC	20pF

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