2N6310 NPN Transistor

The 2N6310 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N6310 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N6310 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N6310 transistor as follows.

2N6310 Transistor Specification

Transistor Code		2N6310
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO59
Collector Power Dissipation (Maximum)	PC	400W
Collector-Base Voltage (Maximum)	VCB	140V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	90A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	30MHz
Collector Capacitance	CC	1000pF

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