2N6306 NPN Transistor

The 2N6306 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N6306 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N6306 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N6306 transistor as follows.

2N6306 Transistor Specification

Transistor Code		2N6306
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	125W
Collector-Base Voltage (Maximum)	VCB	500V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	5MHz
Collector Capacitance	CC	250pF

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