2N6301SMD05 NPN Transistor

The 2N6301SMD05 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N6301SMD05 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N6301SMD05 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N6301SMD05 transistor as follows.

2N6301SMD05 Transistor Specification

Transistor Code		2N6301SMD05
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO276AA
Collector Power Dissipation (Maximum)	PC	75W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		750
Transition Frequency	FT	4MHz
Collector Capacitance	CC	200pF

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