2N6175 NPN Transistor

The 2N6175 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N6175 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N6175 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N6175 transistor as follows.

2N6175 Transistor Specification

Transistor Code		2N6175
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	300V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	130°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	21MHz

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