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2N6175 NPN Transistor

The 2N6175 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N6175 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N6175 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N6175 transistor as follows.

Circuit diagram symbol of the 2N6175 transistor

2N6175 Transistor Specification

Transistor Code 2N6175
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 300V
Collector-Emitter Voltage (Maximum) VCE 250V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 130°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 21MHz

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