2N5813 PNP Transistor

The 2N5813 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N5813 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5813 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N5813 transistor as follows.

2N5813 Transistor Specification

Transistor Code		2N5813
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		X55-1
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	35V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.75A
Operating Junction Temperature (Maximum)	TJ	135°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	135MHz
Collector Capacitance	CC	15pF

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