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2N5813 PNP Transistor

The 2N5813 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N5813 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5813 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N5813 transistor as follows.

Circuit diagram symbol of the 2N5813 transistor

2N5813 Transistor Specification

Transistor Code 2N5813
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package X55-1
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 35V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.75A
Operating Junction Temperature (Maximum) TJ 135°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 135MHz
Collector Capacitance CC 15pF

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More Transistors Datasheets in X55-1 Package

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