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2N5785N1 NPN Transistor

The 2N5785N1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5785N1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5785N1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5785N1 transistor as follows.

Circuit diagram symbol of the 2N5785N1 transistor

2N5785N1 Transistor Specification

Transistor Code 2N5785N1
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO276AA
Collector Power Dissipation (Maximum) PC 25W
Collector-Base Voltage (Maximum) VCB 65V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 3.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 20MHz

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