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2N5762 NPN Transistor

The 2N5762 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5762 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5762 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5762 transistor as follows.

Circuit diagram symbol of the 2N5762 transistor

2N5762 Transistor Specification

Transistor Code 2N5762
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package X115
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.04A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 3700MHz
Collector Capacitance CC 0.8pF

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