2N5730 NPN Transistor

The 2N5730 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5730 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5730 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5730 transistor as follows.

2N5730 Transistor Specification

Transistor Code		2N5730
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO59
Collector Power Dissipation (Maximum)	PC	45W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	30MHz
Collector Capacitance	CC	150pF

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