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2N5612A NPN Transistor

The 2N5612A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5612A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5612A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5612A transistor as follows.

Circuit diagram symbol of the 2N5612A transistor

2N5612A Transistor Specification

Transistor Code 2N5612A
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO66
Collector Power Dissipation (Maximum) PC 25W
Collector-Base Voltage (Maximum) VCB 120V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 560MHz

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