2N5596 NPN Transistor

The 2N5596 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5596 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5596 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5596 transistor as follows.

2N5596 Transistor Specification

Transistor Code		2N5596
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO128
Collector Power Dissipation (Maximum)	PC	45W
Collector-Base Voltage (Maximum)	VCB	55V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	2.5A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	1500MHz
Collector Capacitance	CC	20pF

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