2N5580 NPN Transistor

The 2N5580 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5580 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5580 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5580 transistor as follows.

2N5580 Transistor Specification

Transistor Code		2N5580
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO66
Collector Power Dissipation (Maximum)	PC	300W
Collector-Base Voltage (Maximum)	VCB	90V
Collector-Emitter Voltage (Maximum)	VCE	70V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	0.4MHz
Collector Capacitance	CC	2000pF

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