2N5551HR NPN Transistor

The 2N5551HR is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5551HR transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5551HR transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5551HR transistor as follows.

2N5551HR Transistor Specification

Transistor Code		2N5551HR
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO18
Collector Power Dissipation (Maximum)	PC	0.36W
Collector-Base Voltage (Maximum)	VCB	180V
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		80
Collector Capacitance	CC	6pF

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