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2N5550G NPN Transistor

The 2N5550G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5550G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5550G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5550G transistor as follows.

Circuit diagram symbol of the 2N5550G transistor

2N5550G Transistor Specification

Transistor Code 2N5550G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-92
Collector Power Dissipation (Maximum) PC 0.625W
Collector-Base Voltage (Maximum) VCB 160V
Collector-Emitter Voltage (Maximum) VCE 140V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 100MHz
Collector Capacitance CC 6pF

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