2N5530 NPN Transistor

The 2N5530 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5530 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5530 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5530 transistor as follows.

2N5530 Transistor Specification

Transistor Code		2N5530
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO61
Collector Power Dissipation (Maximum)	PC	35W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	200MHz

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