2N5416S PNP Transistor

The 2N5416S is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N5416S transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5416S transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N5416S transistor as follows.

2N5416S Transistor Specification

Transistor Code		2N5416S
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO-5
Collector Power Dissipation (Maximum)	PC	10W
Collector-Base Voltage (Maximum)	VCB	350V
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		30
Collector Capacitance	CC	15pF

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