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2N5376 NPN Transistor

The 2N5376 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5376 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5376 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5376 transistor as follows.

Circuit diagram symbol of the 2N5376 transistor

2N5376 Transistor Specification

Transistor Code 2N5376
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package X55-1
Collector Power Dissipation (Maximum) PC 0.36W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 120
Transition Frequency FT 300MHz
Collector Capacitance CC 8pF

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