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2N5130 NPN Transistor

The 2N5130 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5130 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5130 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5130 transistor as follows.

Circuit diagram symbol of the 2N5130 transistor

2N5130 Transistor Specification

Transistor Code 2N5130
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO106
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 12V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 1V
Forward Current Transfer Ratio (hFE Value) 12
Transition Frequency FT 450MHz
Collector Capacitance CC 3pF

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