2N5059S NPN Transistor

The 2N5059S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5059S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5059S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5059S transistor as follows.

2N5059S Transistor Specification

Transistor Code		2N5059S
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO39
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	250V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		35
Transition Frequency	FT	30MHz
Collector Capacitance	CC	10pF

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