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2N4956 NPN Transistor

The 2N4956 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N4956 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N4956 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N4956 transistor as follows.

Circuit diagram symbol of the 2N4956 transistor

2N4956 Transistor Specification

Transistor Code 2N4956
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package R137
Collector Power Dissipation (Maximum) PC 0.45W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.03A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 150
Transition Frequency FT 60MHz
Collector Capacitance CC 6pF

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More Transistors Datasheets in R137 Package

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