2N3960 NPN Transistor

The 2N3960 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N3960 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N3960 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N3960 transistor as follows.

2N3960 Transistor Specification

Transistor Code		2N3960
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO18
Collector Power Dissipation (Maximum)	PC	0.4W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	1600MHz
Collector Capacitance	CC	2.5pF

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