2N3867SMD05 PNP Transistor

The 2N3867SMD05 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N3867SMD05 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N3867SMD05 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N3867SMD05 transistor as follows.

2N3867SMD05 Transistor Specification

Transistor Code		2N3867SMD05
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO276AA
Collector Power Dissipation (Maximum)	PC	35W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		40
Collector Capacitance	CC	120pF

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