2N3636S PNP Transistor

The 2N3636S is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N3636S transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N3636S transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N3636S transistor as follows.

2N3636S Transistor Specification

Transistor Code		2N3636S
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO5
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	175V
Collector-Emitter Voltage (Maximum)	VCE	175V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	150MHz
Collector Capacitance	CC	10pF

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