2N3055ESMD NPN Transistor

The 2N3055ESMD is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N3055ESMD transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N3055ESMD transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N3055ESMD transistor as follows.

2N3055ESMD Transistor Specification

Transistor Code		2N3055ESMD
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO276AB
Collector Power Dissipation (Maximum)	PC	115W
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	15A
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	2.5MHz

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