2N2979 NPN Transistor

The 2N2979 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N2979 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N2979 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N2979 transistor as follows.

2N2979 Transistor Specification

Transistor Code		2N2979
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO71-1
Collector Power Dissipation (Maximum)	PC	0.25W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	0.03A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		150
Transition Frequency	FT	60MHz
Collector Capacitance	CC	4pF

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More Transistors Datasheets in TO71-1 Package

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