2N2926-4 NPN Transistor

The 2N2926-4 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N2926-4 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N2926-4 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N2926-4 transistor as follows.

2N2926-4 Transistor Specification

Transistor Code		2N2926-4
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO98-1
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	100°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	100MHz
Collector Capacitance	CC	10pF

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