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2N2857C1B NPN Transistor

The 2N2857C1B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N2857C1B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N2857C1B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N2857C1B transistor as follows.

Circuit diagram symbol of the 2N2857C1B transistor

2N2857C1B Transistor Specification

Transistor Code 2N2857C1B
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package LCC1
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.04A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 30
Collector Capacitance CC 1pF

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