2N2855 NPN Transistor

The 2N2855 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N2855 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N2855 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N2855 transistor as follows.

2N2855 Transistor Specification

Transistor Code		2N2855
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO62
Collector Power Dissipation (Maximum)	PC	0.85W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	200°C
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	30MHz
Collector Capacitance	CC	125pF

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