2N2855-3 NPN Transistor

The 2N2855-3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N2855-3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N2855-3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N2855-3 transistor as follows.

2N2855-3 Transistor Specification

Transistor Code		2N2855-3
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		MT27
Collector Power Dissipation (Maximum)	PC	0.85W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	200°C
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	30MHz
Collector Capacitance	CC	125pF

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