2N2706M PNP Transistor

The 2N2706M is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N2706M transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N2706M transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N2706M transistor as follows.

2N2706M Transistor Specification

Transistor Code		2N2706M
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO1
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	32V
Collector-Emitter Voltage (Maximum)	VCE	32V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	75°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		70
Transition Frequency	FT	0.5MHz

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