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2N2706M PNP Transistor

The 2N2706M is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N2706M transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N2706M transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N2706M transistor as follows.

Circuit diagram symbol of the 2N2706M transistor

2N2706M Transistor Specification

Transistor Code 2N2706M
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Package TO1
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 32V
Collector-Emitter Voltage (Maximum) VCE 32V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 75°C
Emitter-Base Voltage (Maximum) VEB 10V
Forward Current Transfer Ratio (hFE Value) 70
Transition Frequency FT 0.5MHz

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