2N1981 PNP Transistor

The 2N1981 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1981 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1981 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1981 transistor as follows.

2N1981 Transistor Specification

Transistor Code		2N1981
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO36
Collector Power Dissipation (Maximum)	PC	170W
Collector-Base Voltage (Maximum)	VCB	70V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	110°C
Emitter-Base Voltage (Maximum)	VEB	20V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	0.03MHz

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