2N1659-13 PNP Transistor

The 2N1659-13 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1659-13 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1659-13 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1659-13 transistor as follows.

2N1659-13 Transistor Specification

Transistor Code		2N1659-13
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO13
Collector Power Dissipation (Maximum)	PC	85W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	100°C
Emitter-Base Voltage (Maximum)	VEB	40V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	20MHz

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