2N1365 PNP Transistor

The 2N1365 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1365 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1365 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1365 transistor as follows.

2N1365 Transistor Specification

Transistor Code		2N1365
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO3
Collector Power Dissipation (Maximum)	PC	106W
Collector-Base Voltage (Maximum)	VCB	120V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	110°C
Emitter-Base Voltage (Maximum)	VEB	50V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	0.1MHz

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