2N1358M PNP Transistor

The 2N1358M is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1358M transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1358M transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1358M transistor as follows.

2N1358M Transistor Specification

Transistor Code		2N1358M
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO36
Collector Power Dissipation (Maximum)	PC	150W
Collector-Base Voltage (Maximum)	VCB	80V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	110°C
Emitter-Base Voltage (Maximum)	VEB	60V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	0.08MHz

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