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2N1306 NPN Transistor

The 2N1306 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N1306 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1306 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N1306 transistor as follows.

Circuit diagram symbol of the 2N1306 transistor

2N1306 Transistor Specification

Transistor Code 2N1306
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Germanium(GE)
Package TO5
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 25V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.3A
Operating Junction Temperature (Maximum) TJ 85°C
Emitter-Base Voltage (Maximum) VEB 25V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 8MHz
Collector Capacitance CC 20pF

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