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2N123-5 PNP Transistor

The 2N123-5 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N123-5 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N123-5 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N123-5 transistor as follows.

Circuit diagram symbol of the 2N123-5 transistor

2N123-5 Transistor Specification

Transistor Code 2N123-5
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Package TO5
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.125A
Operating Junction Temperature (Maximum) TJ 85°C
Emitter-Base Voltage (Maximum) VEB 10V
Forward Current Transfer Ratio (hFE Value) 75
Transition Frequency FT 4MHz
Collector Capacitance CC 24pF

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