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2N1200 NPN Transistor

The 2N1200 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N1200 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1200 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N1200 transistor as follows.

Circuit diagram symbol of the 2N1200 transistor

2N1200 Transistor Specification

Transistor Code 2N1200
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO9
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 14V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 1V
Forward Current Transfer Ratio (hFE Value) 7
Transition Frequency FT 25MHz
Collector Capacitance CC 3.5pF

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