2N1196 PNP Transistor

The 2N1196 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1196 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1196 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1196 transistor as follows.

2N1196 Transistor Specification

Transistor Code		2N1196
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.35W
Collector-Base Voltage (Maximum)	VCB	70V
Collector-Emitter Voltage (Maximum)	VCE	70V
Collector Current (Maximum)	IC	0.015A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		5
Transition Frequency	FT	40MHz
Collector Capacitance	CC	4pF

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