2N1176 PNP Transistor

The 2N1176 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1176 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1176 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1176 transistor as follows.

2N1176 Transistor Specification

Transistor Code		2N1176
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	35V
Collector-Emitter Voltage (Maximum)	VCE	35V
Collector Current (Maximum)	IC	0.3A
Operating Junction Temperature (Maximum)	TJ	100°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	0.3MHz
Collector Capacitance	CC	70pF

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